As switching time and RDSON of power devices (MOSFETs and IGBTs) has steadily reduced, that progress has been accompanied by a problem related to producing “known good die”.

Many high-performance die today are used in power modules with multiple die per module. The costing of re-working modules to replace die that do not meet specification for switching speed or RDSON is unacceptable in today’s competitive markets where devices require less than 2mΩ.

The problem of accurately measuring the switching time of a power device on a conventional wafer prober, relates to the electrical connection of the tester to the drain or collector via the vacuum chuck plate.

Download our application note below for more information.